Sharp LC-22LE510K (serv.man2) Service Manual ▷ View online
65
LC-19LE510
LC-22LE510
LC-24LE510
21. FDC642
21.1.
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced PowerTrench
® process that
has been especially tailored to minimize on-state resistance and yet maintain low gate charge for
superior switching performance.
superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for
applications where the larger packages are impractical.
applications where the larger packages are impractical.
21.2.
Features
Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A
Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low rDS(on)
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1
mm thick)
Termination is Lead-free and RoHS Compliant
21.3.
Pinning
20.3
20.2
20.1
20.
66
LC-19LE510
LC-22LE510
LC-24LE510
22. FDC604P
22.1.
General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been
optimized for battery power management applications.
optimized for battery power management applications.
22.2.
Features
–5.5 A, –20 V. RDS(ON) = 33 mΩ @ VGS = –4.5 V
RDS(ON) = 43 mΩ @ VGS = –2.5 V
RDS(ON) = 60 mΩ @ VGS = –1.8 V
Fast switching speed.
High performance trench technology for extremely low RDS(ON)(S)
22.3.
Pinning
21.
21.3
21.2
21.1
67
LC-19LE510
LC-22LE510
LC-24LE510
23.3.
VGA (CN132)
23. CONNECTORS
23.1.
SCART (SC1)
23.2.
HDMI (CN707,CN708)
22.2
22.1
22.
68
LC-19LE510
LC-22LE510
LC-24LE510
23.3.
VGA (CN132)
22.3
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