Sharp LC-32LD135K (serv.man2) Service Manual ▷ View online
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Table 10: Recommended operating conditions
6. 1Gb DDR3 SDRAM
Hynix H5TQ1G630FA
a) Description
The H5TQ1G6(8)3DFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III
(DDR3) Synchronous DRAM, ideally suited for the main memory applications which
requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully
synchronous operations referenced to both rising and falling edges of the clock. While all
addresses and control inputs are latched on the rising edges of the CK (falling edges of the
CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling
edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high
bandwidth.
requires large memory density and high bandwidth. Hynix 1Gb DDR3 SDRAMs offer fully
synchronous operations referenced to both rising and falling edges of the clock. While all
addresses and control inputs are latched on the rising edges of the CK (falling edges of the
CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling
edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high
bandwidth.
b) Features
• DQ Power & Power supply : VDD & VDDQ = 1.5V +/- 0.075V
• DQ Ground supply : VSSQ = Ground
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM masks write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported
• Programmable additive latency 0, CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Programmable PASR(Partial Array Self-Refresh) for Digital consumer Applications.
• DQ Ground supply : VSSQ = Ground
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM masks write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported
• Programmable additive latency 0, CL-1, and CL-2 supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Programmable PASR(Partial Array Self-Refresh) for Digital consumer Applications.
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• Programmable BL=4 supported (tCCD=2CLK) for Digi-tal consumer Applications.
• Programmable ZQ calibration supported
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
• Programmable ZQ calibration supported
• BL switch on the fly
• 8banks
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
- 7.8 μs at -40oC ~ 85 oC
- 3.9 μs at 85oC ~ 95 oC
- Commercial Temperature ( 0oC ~ 85 oC)
- Industrial Temperature ( -40oC ~ 85 oC)
- 3.9 μs at 85oC ~ 95 oC
- Commercial Temperature ( 0oC ~ 85 oC)
- Industrial Temperature ( -40oC ~ 85 oC)
• Auto Self Refresh supported
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• On Die Thermal Sensor supported
• 8 bit pre-fetch
• JEDEC standard 78ball FBGA(x8), 96ball FBGA(x16)
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• On Die Thermal Sensor supported
• 8 bit pre-fetch
Table 11: Recommended operating conditions
7. 1Gb G-die DDR3 SDRAM
Samsung K4B1G1646G
a) Key Features
• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for
1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 900MHz fCK for 1866Mb/sec/pin
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for
1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 900MHz fCK for 1866Mb/sec/pin
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• 8 Banks
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-
1333), 8 (DDR3-1600) and 9 (DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4
with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or
MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
• Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,13
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-
1333), 8 (DDR3-1600) and 9 (DDR3-1866)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4
with tCCD = 4 which does not allow seamless read or write [either On the fly using A12 or
MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
Table 12: 1Gb DDR3 G-die Speed bins
b) Description
The 1Gb DDR3 SDRAM G-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8
I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer
rates of up to 1866Mb/sec/pin (DDR3- 1866) for general applications.
rates of up to 1866Mb/sec/pin (DDR3- 1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM fea-tures such as
posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using
ODT pin and Asynchronous Reset.
ODT pin and Asynchronous Reset.
All of the control and address inputs are synchronized with a pair of exter-nally supplied
differential clocks. Inputs are latched at the crosspoint of dif-ferential clocks (CK rising and
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