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08/21/06

IRFI4212H-117P

Ÿ

Integrated half-bridge package

Ÿ

Reduces the part count by half

Ÿ

Facilitates better PCB layout

Ÿ

Key parameters optimized for Class-D
audio amplifier applications

Ÿ

Low R

DS(ON)

 for improved efficiency

Ÿ

Low Qg and Qsw for better THD and
improved efficiency

Ÿ

Low Qrr for better THD and lower EMI

Ÿ

Can delivery up to 150W per channel into
4

Ω

 load in half-bridge configuration

amplifier

Ÿ

Lead-free package

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.

g

V

DS

Drain-to-Source Voltage

V

V

GS

Gate-to-Source Voltage

I

D

 @ T

C

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

A

I

D

 @ T

C

 = 100°C

Continuous Drain Current, V

GS

 @ 10V

I

DM

Pulsed Drain Current 

c

P

D

 @T

C

 = 25°C

Power Dissipation 

f

W

P

D

 @T

C

 = 100°C

Power Dissipation 

f

Linear Derating Factor  

W/°C

E

AS

Single Pulse Avalanche Energy

d

mJ

T

J 

Operating Junction and

°C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

g

R

θ

JC 

Junction-to-Case 

f

–––

7.1

°C/W

R

θ

JA 

Junction-to-Ambient (free air)

–––

65

18

7.0

0.14

10lb

x

in (1.1N

x

m)

-55  to + 150

300

41

6.8

44

 ±20

100

11

V

DS

100

V

R

DS(ON)

 typ. @ 10V

58

m

:

Q

g

 typ.

12

nC

Q

sw

 typ.

6.9

nC

R

G(int)

 typ. 

3.4

Ω

T

J

 max

150

°C

g

Gate

Drain

Source

TO-220 Full-Pak 5 PIN

PD - 97249A

31

©2003 Fairchild Semiconductor Corporation

ISL9R1560PF2  Rev. A1

The ISL9R1560PF2 is a Stealth™ diode optimized for 
low loss performance in high frequency hard switched 
applications. The Stealth™ family exhibits low reverse 
recovery current (I

RM(REC)

) and exceptionally soft 

recovery under typical operating conditions.

This device is intended for use as a free wheeling or 
boost diode in power supplies and other power 
switching applications. The low I

RM(REC)

 and short t

a

 

phase reduce loss in switching transistors. The soft 
recovery minimizes ringing, expanding the range of 
conditions under which the diode may be operated 
without the use of additional snubber circuitry. Consider 
using the Stealth™ diode with an SMPS IGBT to 
provide the most efficient and highest power density 
design at lower cost.

Formerly developmental type TA49410.

• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t

b 

/ t

a

 > 1.2

• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t

rr

 < 30ns

• Operating Temperature. . . . . . . . . . . . . . . . . .  150

o

C

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . .  1kV

• Avalanche Energy Rated

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

 

Symbol

Parameter

Ratings

Units

V

RRM

Repetitive Peak Reverse Voltage

600

V

V

RWM

Working Peak Reverse Voltage

600

V

V

R

DC Blocking Voltage

600

V

I

F(AV)

Average Rectified Forward Current (T

C

 = 25

o

C)

15

A

I

FRM

Repetitive Peak Surge Current (20kHz Square Wave)

30

A

I

FSM

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

200

A

P

D

Power Dissipation

30

W

E

AVL

Avalanche Energy (1A, 40mH)

20

mJ

T

J

, T

STG

Operating and Storage Temperature Range

-55 to 150

°C

T

L

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

300

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and 

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

K

A

CATHODE

ANODE

TO-220F

32

©2004 Fairchild Semiconductor Corporation

Rev. B1, August 2004

T

a

=25

°

C unless otherwise noted 

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Notes:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

a

=25

°

C unless otherwise noted 

* Pulse Test: Pulse Width 

≤ 

300

µ

s, Duty Cycle 

≤ 

2.0%

V

CEO

Collector-Emitter Voltage

-150

V

V

CBO

Collector-Base Voltage

 -160

V

V

EBO

Emitter-Base Voltage

-5.0

V

I

C

Collector Current

- Continuous

-600

mA

T

J

, T

STG

Operating and Storage Junction Temperature Range

-55 ~ 150

°

C

BV

CEO

Collector-Emitter Breakdown Voltage *

I

C 

= -1.0mA, I

B 

= 0

-150

V

BV

CBO

Collector-Base Breakdown Voltage

I

C 

= -100

µ

A, I

E 

= 0

-160

V

BV

EBO

Emitter-Base Breakdown Voltage

I

E 

= -10

µ

A, I

C 

= 0

-5.0

V

I

CBO

Collector Cutoff Current

V

CB 

= -120V, I

E 

= 0

V

CB 

= -120V, I

E 

= 0, T

a

 = 100

°

C

-50
-50

nA

µ

A

I

EBO

Emitter Cutoff Current

V

EB

= -3.0V, I

C

=0

-50

nA

h

FE

DC Current Gain                

I

C 

= -1.0mA, V

CE 

= -5.0V

I

C 

= -10mA, V

CE 

= -5.0V

I

C 

= -50mA, V

CE 

= -5.0V

50
60
50

240

V

CE 

(sat)

Collector-Emitter Saturation Voltage

I

C 

= -10mA, I

B 

= -1.0mA

I

C 

= -50mA, I

B 

= -5.0mA

-0.2
-0.5

V
V

V

BE 

(sat)

 Base-Emitter Saturation Voltage

I

C 

= -10mA, I

B 

= -1.0mA

I

C 

= -50mA, I

B 

= -5.0mA

-1.0
-1.0

V
V

f

T

Current Gain Bandwidth Product

I

C 

= -10mA, V

CE 

= -10V,   

f = 100MHz

100

300

MHz

C

ob

Output Capacitance

V

CB 

= -10V, I

E 

= 0, f = 1MHz

6.0

pF

N

F

Noise Figure

I

C 

= -250

µ

A, V

CE 

= -5.0V, R

S 

= 1.0K

Ω

f = 10Hz to 15.7KHz

8.0

dB

• This device is designed as a general purpose amplifier and switch for 

applications requiring high voltage.

SOT-23

B

E

C

Mark: 2L

33

© 2009 Fairchild Semiconductor Corporation

  www.fairchildsemi.com

2N5551 / MMBT5551 Rev. B1

June 2009

• This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) 
• Suffix “-Y” means h

FE

 180~240 in 2N5551 (Test condition :  I

C

 = 10mA, V

CE

 = 5.0V)

T

A

 = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

T

A

=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."

V

CEO

Collector-Emitter Voltage

160

V

V

CBO

Collector-Base Voltage

180

V

V

EBO

Emitter-Base Voltage

6.0

V

I

C

Collector current  - Continuous

600

mA

T

J

, T

stg

Junction and Storage Temperature

-55 to +150

°

C

P

D

Total Device Dissipation

Derate above 25°C

625

5.0

350

2.8

mW

mW/°C

R

θ

JC

Thermal Resistance, Junction to Case

83.3

°

C/W

R

θ

JA

Thermal Resistance, Junction to Ambient

200

357

°

C/W

 1. Base   2. Emitter   3. Collector

1

2

3

34