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©2007 Fairchild Semiconductor Corporation 

www.fairchildsemi.com

FDP20N50 / FDPF20N50 Rev. B

• 20A, 500V, R

DS(on)

 = 0.23Ω @V

GS

 = 10 V

• Low gate charge ( typical 45.6 nC)
• Low  C

rss

 ( typical  27 pF)

• Fast  s

witching

• 100% avalanche tested
• Improved dv/dt capability

These N- Channel enhancement mode   power field ef fect

transistors are p roduced using Fairchild’ s pr oprietary, pla nar

stripe, DMOS technology.
This  advanced techn ology has  been especially  tailored to

minimize on-st ate  resistance, pr ovide  superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

V

DSS

Drain-Source Voltage

500

V

I

D

Drain Current

- Continuous (T

C

 = 25°C)

- Continuous (T

C

 = 100°C)

20

12.9

20 *

12.9 *

A

A

I

DM

Drain Current

- Pulsed

(Note 1)

80

80 *

A

V

GSS

Gate-Source voltage

±

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

1110

mJ

I

AR

Avalanche Current

(Note 1)

20

A

E

AR

Repetitive Avalanche Energy

(Note 1)

25

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation

(T

C

 = 25°C)

- Derate above 25°C

250

2.0

62

0.5

W

W/°C

T

J, 

T

STG

Operating and Storage Temperature Range

-55 to +150

°

C

T

L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°

C

R

θ

JC

Thermal Resistance, Junction-to-Case

0.5

2.0

°

C/W

R

θ

CS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°

C/W

R

θ

JA

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°

C/W

* Drain current limited by maximum junction temperature

29

©2003 Fairchild Semiconductor Corporation

 Rev. A, April 2003

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.

• 6.6A, 800V, R

DS(on)

 = 1.9

Ω

 @V

GS

 = 10 V

• Low gate charge ( typical  27 nC)
• Low Crss ( typical  10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

    T

C

 = 25°C unless otherwise noted

* Drain current limited by maximum junction temperature.

V

DSS

Drain-Source Voltage

800

V

I

D

Drain Current 

- Continuous (T

C

 = 25°C)

6.6

6.6 *

A

- Continuous (T

C

 = 100°C)

4.2

4.2 *

A

I

DM

Drain Current

- Pulsed

(Note 1)

26.4

26.4 *

A

V

GSS

Gate-Source Voltage

±

 30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

580

mJ

I

AR

Avalanche Current

(Note 1)

6.6

A

E

AR

Repetitive Avalanche Energy

(Note 1)

16.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

P

D

Power Dissipation (T

C

 = 25°C)

167

56

W

- Derate above 25°C

1.33

0.44

W/°C

T

J

, T

STG

Operating and Storage Temperature Range

-55 to +150

°C

T

L

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

R

θ

JC

Thermal Resistance, Junction-to-Case

0.75

2.25

°C/W

R

θ

JS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

°C/W

R

θ

JA

Thermal Resistance, Junction-to-Ambient

62.5

62.5

°C/W

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