Harman Kardon MAS 100-110 (serv.man7) Service Manual ▷ View online
Semiconductor Components Industries, LLC, 2000
October, 2000 – Rev. 3
Publication Order Number:
MUR1620CT/D
MUR1610CT, MUR1615CT,
MUR1620CT, MUR1640CT,
MUR1660CT
SWITCHMODE
Power Rectifiers
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
following features:
•
Ultrafast 35 and 60 Nanosecond Recovery Times
•
175
°C Operating Junction Temperature
•
Popular TO–220 Package
•
Epoxy Meets UL94, V
O
@ 1/8
″
•
High Temperature Glass Passivated Junction
•
High Voltage Capability to 600 Volts
•
Low Leakage Specified @ 150
°C Case Temperature
•
Current Derating @ Both Case and Ambient Temperatures
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.9 grams (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
•
Shipped 50 units per plastic tube
•
Marking: U1610, U1615, U1620, U1640, U1660
MAXIMUM RATINGS
Please See the Table on the Following Page
Device
Package
Shipping
ORDERING INFORMATION
MUR1610CT
TO–220
http://onsemi.com
TO–220AB
CASE 221A
PLASTIC
50 Units/Rail
3
4
1
ULTRAFAST
RECTIFIERS
8.0 AMPERES
100–600 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
U16xx
U16xx = Device Code
xx
xx
= 10, 15, 20, 40 or 60
MUR1615CT
TO–220
50 Units/Rail
MUR1620CT
TO–220
50 Units/Rail
MUR1640CT
TO–220
50 Units/Rail
MUR1660CT
TO–220
50 Units/Rail
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 37 of 57
Semiconductor Components Industries, LLC, 2008
June, 2008
ï Rev. 5
Publication Order Number:
MUR1620CTR/D
MUR1620CTR,
MURB1620CTR
Preferred Device
SWITCHMODE]
Power Rectifier
These state
ïofïtheïart devices are designed for use in negative
switching power supplies, inverters and as free wheeling diodes. Also,
used in conjunction with common cathode dual Ultrafast Rectifiers,
makes a single phase full
used in conjunction with common cathode dual Ultrafast Rectifiers,
makes a single phase full
ïwave bridge.
Features
•
Common Anode Dual Rectifier (8.0 A per Leg or 16 A per Package)
•
Ultrafast 35 Nanosecond Reverse Recovery Times
•
Exhibits Soft Recovery Characteristics
•
High Temperature Glass Passivated Junction
•
Low Leakage Specified @ 150
°C Case Temperature
•
Current Derating @ Both Case and Ambient Temperatures
•
Epoxy Meets UL 94 V
ï0 @ 0.125 in
•
Complement to MUR1620CT and MURB1620CT Common Cathode
Device
•
Pb
ïFree Packages are Available
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: MUR1620CTR: 1.9 Grams (Approximately)
MURB1620CTR: 1.7 Grams (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260
°C Max. for 10 Seconds
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200
V
Average Rectified Forward Voltage
(Rated V
(Rated V
R
, T
C
= 160
°C)
Per Leg
Per Total Device
I
F(AV)
8.0
16
A
Peak Repetitive Surge Current
(Rated V
(Rated V
R
, Square Wave,
20 kHz, T
C
= 140
°C)
Per Diode
I
FM
16
A
Non
ïRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Operating Junction and Storage
Temperature Range
Temperature Range
T
J
, T
stg
ï65 to +175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ULTRAFAST RECTIFIER
16 AMPERES, 200 VOLTS
1
3
2, 4
Preferred devices are recommended choices for future use
and best overall value.
and best overall value.
http://onsemi.com
D
2
PAK
CASE 418B
STYLE 5
3
4
1
MARKING
DIAGRAMS
U1620R = Device Code
KAK
KAK
= Diode Polarity
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb
ïFree Package
AYWW
U1620RG
KAK
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
TO
ï220AB
CASE 221A
STYLE 7
AYWW
U1620RG
KAK
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 38 of 57
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TI
P31 Ser
ie
s(TIP3
1/3
1A
/31B/
/31B/
31C)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°C unless otherwise noted
Electrical Characteristics
T
C
=25
°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
: TIP31B
: TIP31C
40
60
80
60
80
100
V
V
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
: TIP31B
: TIP31C
40
60
80
60
80
100
V
V
V
V
V
V
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current (DC)
3
A
I
CP
Collector Current (Pulse)
5
A
I
B
Base Current
1
A
P
C
Collector Dissipation (T
C
=25
°C)
40
W
P
C
Collector Dissipation (T
a
=25
°C)
2
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
: TIP31A
: TIP31B
: TIP31C
I
C
= 30mA, I
B
= 0
40
60
80
60
80
100
V
V
V
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
: TIP31B/31C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
0.3
mA
mA
mA
I
CES
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
: TIP31A
: TIP31B
: TIP31C
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
200
200
200
200
200
200
200
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current
V
EB
= 5V, I
C
= 0
1
mA
h
FE
* DC Current Gain
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
25
10
10
50
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 375mA
1.2
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
V
CE
= 4V, I
C
= 3A
1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= 10V, I
C
= 500mA
3.0
MHz
TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
1.Base 2.Collector 3.Emitter
1
TO-220
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 39 of 57
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TI
P32 Ser
ie
s(TIP3
2/3
2A
/32B/
/32B/
32C)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°C unless otherwise noted
Electrical Characteristics
T
C
=25
°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32B
: TIP32C
- 40
- 60
- 80
- 60
- 80
- 100
V
V
V
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32B
: TIP32C
- 40
- 60
- 80
- 60
- 80
-100
V
V
V
V
V
V
V
V
EBO
Emitter-Base Voltage
- 5
V
I
C
Collector Current (DC)
- 3
A
I
CP
Collector Current (Pulse)
- 5
A
I
B
Base Current
- 3
A
P
C
Collector Dissipation (T
C
=25
°C)
40
W
P
C
Collector Dissipation (T
a
=25
°C)
2
W
T
J
Junction Temperature
150
°C
T
STG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
* Collector-Emitter Sustaining Voltage
: TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32A
: TIP32B
: TIP32C
I
C
= - 30mA, I
B
= 0
-40
-60
-80
-60
-80
-100
V
V
V
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP32/32A
: TIP32B/32C
: TIP32B/32C
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
- 0.3
- 0.3
- 0.3
mA
mA
mA
I
CES
Collector Cut-off Current
: TIP32
: TIP32A
: TIP32B
: TIP32C
: TIP32A
: TIP32B
: TIP32C
V
CE
= - 40V, V
EB
= 0
V
CE
= - 60V, V
EB
= 0
V
CE
= - 80V, V
EB
= 0
V
CE
= - 100V, V
CE
= 0
- 200
- 200
- 200
- 200
- 200
- 200
- 200
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current
V
EB
= - 5V, I
C
= 0
- 1
mA
h
FE
* DC Current Gain
V
CE
= - 4V, I
C
= - 1A
V
CE
= - 4V, I
C
= - 3A
25
10
10
50
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= - 3A, I
B
= - 375mA
- 1.2
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
V
CE
= - 4V, I
C
= - 3A
- 1.8
V
f
T
Current Gain Bandwidth Product
V
CE
= - 10V, I
C
= - 500mA
3.0
MHz
TIP32 Series(TIP32/32A/32B/32C)
Medium Power Linear Switching Applications
• Complement to TIP31/31A/31B/31C
1.Base 2.Collector 3.Emitter
1
TO-220
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 40 of 57
Click on the first or last page to see other MAS 100-110 (serv.man7) service manuals if exist.