Harman Kardon MAS 100-110 (serv.man7) Service Manual ▷ View online
www.fairchildsemi.com
FAN7602 Rev. 1.0.
1
FAN7602 Green Current Mode PWM Controller
Pin Assignments
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin Number
Pin Name
Pin Function Description
1
LUVP
Line Under Voltage Protection Pin. This pin is used to protect the set when the
input voltage is lower than the rated input voltage range.
input voltage is lower than the rated input voltage range.
2
Latch/Plimit
Latch Protection and Power Limit Pin. When the pin voltage exceeds 4V, the latch
protection works and the latch protection is reset when the Vcc voltage is lower than
5V. For the power limit function, the OCP level decreases as the pin voltage
increases.
protection works and the latch protection is reset when the Vcc voltage is lower than
5V. For the power limit function, the OCP level decreases as the pin voltage
increases.
3
CS/FB
Current Sense and Feedback Pin. This pin is used to sense the MOSFET current
for the current mode PWM and OCP. The output voltage feedback information and
the current sense information are added using external RC filter.
for the current mode PWM and OCP. The output voltage feedback information and
the current sense information are added using external RC filter.
4
GND
Ground Pin. This pin is used for the ground potential of all the pins. For proper oper-
ation, the signal ground and the power ground should be separated.
ation, the signal ground and the power ground should be separated.
5
OUT
Gate Drive Output Pin. This pin is an output pin to drive an external MOSFET. The
peak sourcing current is 450mA and the peak sinking current is 600mA. For proper
operation, the stray inductance in the gate driving path must be minimized.
peak sourcing current is 450mA and the peak sinking current is 600mA. For proper
operation, the stray inductance in the gate driving path must be minimized.
6
Vcc
Supply Voltage Pin. IC operating current and MOSFET driving current are supplied
using this pin.
using this pin.
7
NC
No Connection.
8
Vstr
Start-up Pin. This pin is used to supply IC operating current during IC start-up. After
start-up, the internal JFET is turned off to reduce power loss.
F A N 7 6 0 2
1
2
6
5
8
7
Y W W
3
4
Latch/
Plimit
GND
CS/FB
LUVP
Vstr
NC
Vcc
Out
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 25 of 57
©2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDP20N50 / FDPF20N50 Rev. B
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
February 2007
UniFET
TM
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R
DS(on)
= 0.23
: @V
GS
= 10 V
• Low gate charge ( typical 45.6 nC)
• Low C
rss
( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP20N50
FDPF20N50
Unit
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25
qC)
- Continuous (T
C
= 100
qC)
20
12.9
20 *
12.9•• • •
A
A
A
I
DM
Drain Current
- Pulsed
(Note 1)
80
80•• • •
A
V
GSS
Gate-Source voltage
r30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1110
mJ
I
AR
Avalanche Current
(Note 1)
20
A
E
AR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
qC)
- Derate above 25
qC
250
2.0
62
0.5
W
W/
qC
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
qC
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
1/8” from Case for 5 Seconds
300
qC
Symbol
Parameter
FDP20N50
FDPF20N50
Unit
R
TJC
Thermal Resistance, Junction-to-Case
0.5
2.0
qC/W
R
TCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
qC/W
R
TJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
qC/W
* Drain current limited by maximum junction temperature
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 26 of 57
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
FQP
7N80C/FQPF7N80
C
QFET
TM
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6.6A, 800V, R
DS(on)
= 1.9
Ω @V
GS
= 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP7N80C
FQPF7N80C
Units
V
DSS
Drain-Source Voltage
800
V
I
D
Drain Current
- Continuous (T
C
= 25°C)
6.6
6.6 *
A
- Continuous (T
C
= 100°C)
4.2
4.2 *
A
I
DM
Drain Current
- Pulsed
(Note 1)
26.4
26.4 *
A
V
GSS
Gate-Source Voltage
± 30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
580
mJ
I
AR
Avalanche Current
(Note 1)
6.6
A
E
AR
Repetitive Avalanche Energy
(Note 1)
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
C
= 25°C)
167
56
W
- Derate above 25°C
1.33
0.44
W/°C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
°C
T
L
Maximum lead temperature for soldering purposes,
1/8
I from case for 5 seconds
300
°C
Symbol
Parameter
FQP7N80C
FQPF7N80C
Units
R
θJC
Thermal Resistance, Junction-to-Case
0.75
2.25
°C/W
R
θJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̵
̵
̵
̵
{
{
{
{
{
{
{
{
{
{
{
{
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̻
̵
̵
̵
̵
{
{
{
{
{
{
{
{
{
{
{
{
S
D
G
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 27 of 57
April 2009
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FSFR series • Rev.1.0.5
F
S
F
R
-Series — F
a
irch
ild
Po
Po
wer Switch
(F
PS
PS
™
) for
H
a
a
lf-B
ri
ri
dge R
esonant C
onver
ter
FSFR-Series —
Fairchild Power Switch (FPS™)
for Half-Bridge Resonant Converters
Features
Variable Frequency Control with 50% Duty Cycle
for Half-Bridge Resonant Converter Topology
for Half-Bridge Resonant Converter Topology
High Efficiency through Zero Voltage Switching (ZVS)
Internal SuperFET™s with Fast-Recovery Type
Body Diode (t
Body Diode (t
rr
=120ns) for FSFR2100 and UniFETs
with Fast-Recovery Type Body Diode (t
rr
<160ns) for
FSFR2100U/2000/1900/1800/1700.
Fixed Dead Time (350ns) Optimized for MOSFETs
Up to 300kHz Operating Frequency
Pulse Skipping for Frequency Limit (Programmable)
at Light-Load Condition
at Light-Load Condition
Remote On/Off Control Using Control Pin
Protection Functions: Over-Voltage Protection
(OVP), Over-Load Protection (OLP), Over-Current
Protection (OCP), Abnormal Over-Current Protection
(AOCP), Internal Thermal Shutdown (TSD)
(OVP), Over-Load Protection (OLP), Over-Current
Protection (OCP), Abnormal Over-Current Protection
(AOCP), Internal Thermal Shutdown (TSD)
Applications
PDP and LCD TVs
Desktop PCs and Servers
Adapters
Telecom Power Supplies
Audio Power Supplies
Description
The FSFR-series are a highly integrated power switches
designed for high-efficiency half-bridge resonant
converters. Offering everything necessary to build a
reliable and robust resonant converter, the FSFR-series
simplifies designs and improves productivity, while
improving performance. The FSFR-series combines
power MOSFETs with fast-recovery type body diodes, a
high-side gate-drive circuit, an accurate current
controlled oscillator, frequency limit circuit, soft-start, and
built-in protection functions. The high-side gate-drive
circuit has a common-mode noise cancellation
capability, which guarantees stable operation with
excellent noise immunity. The fast-recovery body diode
of the MOSFETs improves reliability against abnormal
operation conditions, while minimizing the effect of the
reverse recovery. Using the zero-voltage-switching (ZVS)
technique dramatically reduces the switching losses and
efficiency is significantly improved. The ZVS also
reduces the switching noise noticeably, which allows a
small-sized Electromagnetic Interference (EMI) filter.
designed for high-efficiency half-bridge resonant
converters. Offering everything necessary to build a
reliable and robust resonant converter, the FSFR-series
simplifies designs and improves productivity, while
improving performance. The FSFR-series combines
power MOSFETs with fast-recovery type body diodes, a
high-side gate-drive circuit, an accurate current
controlled oscillator, frequency limit circuit, soft-start, and
built-in protection functions. The high-side gate-drive
circuit has a common-mode noise cancellation
capability, which guarantees stable operation with
excellent noise immunity. The fast-recovery body diode
of the MOSFETs improves reliability against abnormal
operation conditions, while minimizing the effect of the
reverse recovery. Using the zero-voltage-switching (ZVS)
technique dramatically reduces the switching losses and
efficiency is significantly improved. The ZVS also
reduces the switching noise noticeably, which allows a
small-sized Electromagnetic Interference (EMI) filter.
The FSFR-series can be applied to various resonant
converter topologies such as series resonant, parallel
resonant, and LLC resonant converters.
converter topologies such as series resonant, parallel
resonant, and LLC resonant converters.
Related Resources
AN4151 — Half-bridge LLC Resonant Converter Design
using FSFR-series Fairchild Power Switch (FPS
using FSFR-series Fairchild Power Switch (FPS
TM
)
Ordering Information
Part
Number
Package
Eco
Status
Operating
Junction
Temperature
R
DS(ON_MAX)
Maximum Output Power
without Heatsink
(V
IN
=350~400V)
(1,2)
Maximum Output Power
with Heatsink
(V
IN
=350~400V)
(1,2)
FSFR2100
0.38
:
200W 450W
FSFR2100U
0.51
:
180W 400W
FSFR2000
0.67
:
160W 350W
FSFR1900
0.85
:
140W 300W
FSFR1800
0.95
:
120W 260W
FSFR1700
9-SIP
RoHS
-40 to +130°C
1.25
:
100W 200W
Notes:
1. The junction temperature can limit the maximum output power.
2. Maximum practical continuous power in an open-frame design at 50
1. The junction temperature can limit the maximum output power.
2. Maximum practical continuous power in an open-frame design at 50
qC ambient.
For Fairchild’s definition of Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html
.
harman/kardon
MAS 100 / MAS 110 / MAS 1 Service Manual
Page 28 of 57
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