DOWNLOAD Harman Kardon MAS 100-110 (serv.man7) Service Manual ↓ Size: 3 MB | Pages: 57 in PDF or view online for FREE

SLOS254B – JUNE 1999 – REVISED NOVEMBER 1999

POST OFFICE BOX 655303 

•

 DALLAS, TEXAS 75265

D

D

D

µs

µs

D

D

D

µA/Channel

D

√Hz

D

D

µV

D

Introducing the first members of TI’s new BiMOS general-purpose operational amplifier family—the TLC08x.
The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from
dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from
4.5 V to 16 V across commercial (0

°C to 70°C) and an extended industrial temperature range (–40°C to 125°C),

BiMOS suits a wide range of audio, automotive, industrial and instrumentation applications. Familiar features
like offset nulling pins, and new features like MSOP PowerPAD

 packages and shutdown modes, enable higher

levels of performance in a multitude of applications.

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input
impedance, low-noise CMOS front end with a high-drive Bipolar output stage—thus providing the optimum
performance features of both. AC performance improvements over the TL08x BiFET predecessors include a
bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/

√Hz (an improvement of 60%). DC

improvements include an ensured V

ICR

 that includes ground, a factor of 4 reduction in input offset voltage down

to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB
to 130 dB. Added to this list of impressive features is the ability to drive 

±50-mA loads comfortably from an

ultra-small-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance
general-purpose operational amplifier family.

TLC080

1

8

8

8

—

Yes

TLC081

1

8

8

8

—

TLC082

2

8

8

8

—

—

Refer to the EVM

Selection Guide

TLC083

2

10

14

14

—

Yes

Selection Guide

(Lit# SLOU060)

TLC084

4

—

14

14

20

—

(Lit# SLOU060)

TLC085

4

—

16

16

20

Yes

Copyright 

 1999, Texas Instruments Incorporated

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

1

2

3

4

8

7

6

5

NULL

IN –

IN +

GND

SHDN
V

DD

OUT
NULL

PowerPAD is a trademark of Texas Instruments Incorporated.

harman/kardon

MAS 100 / MAS 110 / MAS 1 Service Manual

Page 17 of 57

www.irf.com 

08/21/06

IRFI4212H-117P

Ÿ

Integrated half-bridge package

Ÿ

Reduces the part count by half

Ÿ

Facilitates better PCB layout

Ÿ

Key parameters optimized for Class-D
audio amplifier applications

Ÿ

Low R

DS(ON)

 for improved efficiency

Ÿ

Low Qg and Qsw for better THD and
improved efficiency

Ÿ

Low Qrr for better THD and lower EMI

Ÿ

Can delivery up to 150W per channel into
4

: load in half-bridge configuration

amplifier

Ÿ

Lead-free package

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.

Absolute Maximum Ratings g

V

DS

Drain-to-Source Voltage

V

V

GS

Gate-to-Source Voltage

I

D

 @ T

C

 = 25°C

Continuous Drain Current, V

GS

 @ 10V

A

I

D

 @ T

C

 = 100°C

Continuous Drain Current, V

GS

 @ 10V

I

DM

Pulsed Drain Current 

c

P

D

 @T

C

 = 25°C

Power Dissipation 

f

W

P

D

 @T

C

 = 100°C

Power Dissipation 

f

Linear Derating Factor  

W/°C

E

AS

Single Pulse Avalanche Energy

d

mJ

T

J 

Operating Junction and

°C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Thermal Resistance g

R

TJC 

Junction-to-Case 

f

–––

7.1

°C/W

R

TJA 

Junction-to-Ambient (free air)

–––

65

18

7.0

0.14

10lb

xin (1.1Nxm)

-55  to + 150

300

41

6.8

44

 ±20

100

11

V

DS

100

V

R

DS(ON)

 typ. @ 10V

58

m

:

Q

g

 typ.

12

nC

Q

sw

 typ.

6.9

nC

R

G(int)

 typ. 

3.4

:

T

J

 max

150

°C

Key Parameters g

Gate

Drain

Source

TO-220 Full-Pak 5 PIN

PD - 97249A

harman/kardon

MAS 100 / MAS 110 / MAS 1 Service Manual

Page 18 of 57

DMP3020LSS

Document number: DS31263 Rev. 4 - 2

May 2008

© Diodes Incorporated

NEW PRODUCT

x

Low On-Resistance 
x

14m

ȍ @ V

GS

 = -10V 

x

25m

ȍ @ V

GS

 = -4.5V 

x

Low Gate Threshold Voltage 

x

Low Input Capacitance 

x

Fast Switching Speed  

x

Low Input/Output Leakage 

x

x

x

x

Case: SOP-8L 

x

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 

x

Moisture Sensitivity:  Level 1 per J-STD-020D 

x

Terminals Connections: See Diagram 

x

Terminals: Finish - Matte Tin annealed over Copper lead 
frame.  Solderable per MIL-STD-202, Method 208 

x

Marking Information: See Page 3 

x

Ordering Information: See Page 3 

x

Weight: 0.072g (approximate) 

SOP-8L

S

D

D

G

D

D

S

S

TOP VIEW

Internal Schematic

TOP VIEW

@T

A

 = 25°C unless otherwise specified 

 

Drain-Source Voltage 

V

DSS

-30

V

Gate-Source Voltage 

V

GSS

r20

V

Drain Current (Note 1)                                       Steady 
                                                                           State 

T

A

 = 25°C 

T

A

= 70°C 

I

D

-12

-6

A

Pulsed Drain Current (Note 3) 

I

DM

-40

A

Total Power Dissipation (Note 1) 

P

D

2.5

W

Thermal Resistance, Junction to Ambient 

R

TJA

50

°C/W

Operating and Storage Temperature Range 

T

J,

T

STG

-55 to +150 

°C

@T

A

 = 25°C unless otherwise specified 

OFF CHARACTERISTICS (Note 5) 
Drain-Source Breakdown Voltage 

BV

DSS

-30





V

V

GS

= 0V, I

D

= -250

PA

Zero Gate Voltage Drain Current 

I

DSS





-1

PA

V

DS 

= -30V, V

GS

 = 0V 

Gate-Source Leakage 

I

GSS





r100

nA

V

GS

 = 

r20V, V

DS

 = 0V 

ON CHARACTERISTICS (Note 5) 
Gate Threshold Voltage 

V

GS(th)

-1



-2

V

V

DS 

= V

GS

, I

D

 = -250

PA

Static Drain-Source On-Resistance 

R

DS (ON)





11.6
18.6

14
25

m

:

V

GS

 = -10V, I

D

 = -8A 

V

GS

 = -4.5V, I

D

 = -5A 

Forward Transconductance 

g

fs



12



S

V

DS 

= -10V, I

D

 = -12A 

Diode Forward Voltage (Note 5) 

V

SD

-0.5



-1.1

V

V

GS

 = 0V, I

S

 = -2A 

DYNAMIC CHARACTERISTICS 
Input Capacitance 

C

iss



1655



pF

Output Capacitance 

C

oss



286



pF

Reverse Transfer Capacitance 

C

rss



240



pF

V

DS

 = -20V, V

GS

 = 0V 

f = 1.0MHz 

Notes: 

1.  Device mounted on 2 oz. Copper pads on FR-4 PCB with R

TJA

 = 50°C/W. 

2.  No purposefully added lead. 
3. Pulse 

width 

d10PS, Duty Cycle d1%.

4.  Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 
5.  Short duration pulse test used to minimize self-heating effect.

harman/kardon

MAS 100 / MAS 110 / MAS 1 Service Manual

Page 19 of 57

Fig. 1 Typical Output Characteristic

0

4

8

12

16

20

0

1

2

3

4

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-I

, D

5

R

AI

N

C

U

R

R

EN

T

 (A

)

D

V

 

=  -1.5V

GS

V

 

=  -2.0V

GS

V

 

=  -2.5V

GS

V

 

=  -3.0V

GS

V

 

=  -4.0V

GS

V

 

=  -10V

GS

Fig. 2  Typical Transfer Characteristic

0

4

8

12

16

20

1

1.5

2

2.5

3

3.5

-V

, GATE-SOURCE VOLTAGE (V)

GS

-I

, D

R

AIN 

C

U

R

R

EN

T

 (A

)

D

T  = -55°C

A

T  = 25°C

A

T  = 85°C

A

T   =  125°C

A

T  = 150°C

A

Fig. 3  Typical On-Resistance 

vs. Drain Current and Gate Voltage 

0

0.005

0.01

0.015

0.02

0.025

0.03

0

6

12

18

24

30

-I , DRAIN-SOURCE CURRENT (A)

D

R

, D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ESI

S

T

AN

C

E (

)

DS

(O

N)

:

V

 

=  -4.5V

GS

V

 

=  -10V

GS

Fig. 4 Typical On-Resistance 

vs. Drain Current and Temperature

0

0.005

0.01

0.015

0.02

0.025

0.03

0

6

12

18

24

30

-I , DRAIN CURRENT (A)

D

R

,  

D

R

AIN-

S

O

U

R

C

E

O

N-

R

ESI

S

T

AN

C

E (

)

DS

(O

N)

:

T  = -55°C

A

T  = 25°C

A

T  = 85°C

A

T  = 125°C

A

T   =  150°C

A

Fig. 5 Normalized On-Resistance vs. Ambient Temperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

A

R

, D

R

AIN-

S

O

UR

CE 

O

N

-R

ESI

ST

AN

CE (

N

O

R

M

A

L

IZ

E

D)

DS

(O

N)

V

 

=  -4.5V

I   =  -5A

GS

D

V

 

=  -10V

I  = -10A

GS

D

Fig. 6 Typical Total Capacitance

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

C

,

C

A

P

A

C

IT

A

N

C

E (

p

F

)

100

1,000

10,000

C

iss

C

oss

C

rss

f = 1MHz

NEW PRODUCT 

DMP3020LSS

Document number: DS31263 Rev. 4 - 2

May 2008

© Diodes Incorporated

harman/kardon

MAS 100 / MAS 110 / MAS 1 Service Manual

Page 20 of 57