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The
800

This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced 
PowerTrench® process that has been especially tailored to minimize on-state resistance 
and yet maintain low gate charge for superior switching performance. 

These devices have been designed to offer exceptional power dissipation in a very small 
footprint for applications where the larger packages are impractical.

x

0D[U'6 RQ PȍDW9 *6  -4.5 V, ID = -4.0 A

x

0D[U'6 RQ PȍDW9 *6  -2.5 V, ID = -3.2 A

x

Fast switching speed

x

Low gate charge (11nC typical) 

x

High performance trench technology for extremely low rDS(on)

x

SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); 
low profile (1 mm thick)

x

Termination is Lead-free and RoHS Compliant

This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench 
process. It has been optimized for battery power management applications.

x

–5.5 A, –95'62 1  Pȍ#9*6 –4.5 V

x

5'6 2 1  Pȍ#VGS = –2.5 V

x

5'6 2 1  Pȍ#9 *6  –1.8 V

x

Fast switching speed.

x

High performance trench technology for extremely low RDS(ON)(S)