JBL SP 150 Service Manual ▷ View online
UNISONIC TECHNOLOGIES CO., LTD
2SC1815
NPN SILICON TRANSISTOR
www.unisonic.com.tw
1 of 4
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R201-006,F
AUDIO FREQUENCY
AMPLIFIER HIGH
FREQUENCY OSC NPN
TRANSISTOR
AMPLIFIER HIGH
FREQUENCY OSC NPN
TRANSISTOR
FEATURES
* Collector-Emitter voltage:
BV
BV
CEO
=50V
* Collector current up to 150mA
* High h
* High h
FE
linearity
* Complimentary to UTC 2SA1015
ORDERING INFORMATION
Ordering Number
Pin Assignment
Normal
Lead Free
Halogen Free
Package
1 2 3
Packing
2SC1815-x-T92-B 2SC1815L-x-T92-B 2SC1815G-x-T92-B
TO-92 E C B
Tape
Box
2SC1815-x-T92-K
2SC1815L-x-T92-K 2SC1815G-x-T92-K
TO-92
E
C
B
Bulk
JBL
150P / 230V Service Manual
Page 20 of 50
2SC1815
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R201-006,F
ABSOLUTE MAXIMUM RATING
(Ta=25℃,unless otherwise specified )
PARAMETER SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
50 mA
Power Dissipation(Ta=25℃) P
D
400 mW
Junction Temperature
T
J
+125 ℃
Storage Temperature
T
STG
-55 ~ +125
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
100
nA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=100mA, I
B
=10mA
0.1
0.25
V
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=100mA, I
B
=10mA
1.0
V
DC Current Gain
h
FE1
h
FE2
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
120
25
700
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=50mA 80
MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
2.0
3.0
pF
Noise Figure
NF
I
C
=-0.1mA, V
CE
=6V
R
G
=10k
Ω, f=100Hz
1.0
10
dB
CLASSIFICATION OF h
FE1
RANK Y GR BL
RANGE 120-240 200-400 350-700
JBL
150P / 230V Service Manual
Page 21 of 50
JBL
150P / 230V Service Manual
Page 22 of 50
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance Junction to Ambient
R
q
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
PD
300
2.4
mW
mW/
°
C
Thermal Resistance Junction to Ambient
R
q
JA
417
°
C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°
C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
—
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
—
50
nAdc
1. FR– 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT3904LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
JBL
150P / 230V Service Manual
Page 23 of 50
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