DOWNLOAD JBL SP 150 Service Manual ↓ Size: 2.56 MB | Pages: 51 in PDF or view online for FREE

Model
SP 150
Pages
51
Size
2.56 MB
Type
PDF
Document
Service Manual
Brand
Device
Audio
File
sp-150.pdf
Date

JBL SP 150 Service Manual ▷ View online

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PCS
90030001
gernal serial no. label
1
pack power cord
30*10mm Synthetic paper
13******** 
1
paste on back of amp panel
180*80(seal)*0.06mm
18040055
LED(2P)
23010335
poly bag
90220179
transformer label
5003RBWH00-T23-357 Φ5mm,red/blue
4
cover LED
2
1
paste on T1
30010012
heat-shrinkable tubing
2P,UL1007,26#,one end mount XH2.5 
connector(remark:no housing,one 
connector mount two cables),another 
end L=700mm with 2.54 female 
connector/L=150mm with XH2.5 
connector(remark:no housing),red/white
1
LED cable
Φ3*20mm  black
16020040
LED cable
17050025
NP E.C.
solder on spring terminal
16030024
4P cable
UL1007,26#,L=65mm,one end mount 
2.54mm female connector,the other end 
5mm bared &tinned
1
solder on spring terminal
2
30060099
EVA piece
145*27*11.5mm adhensive at both sides
2
11080041
Jumper Wire
220uF/50V,105
℃,+/-20%,Φ13*21mm 
L=10mm
10010049
PCB
40200001
spring terminal
Φ0.8*17.5mm L=4mm
1
paste on spring terminal
1
solder on spring terminal
1
solder spring terminal
15*13*5.5mm adhensive at both sides
UL1617 18# L=100+10+5mm red
XJPCB 146*25*1.6mm 94V0 single side
WP4-19B vertical
16130158
cable
2
paste amp panel
2
pad toggle switch
1
fuse holder to amp panel
30060030
EVA piece
30060133
EVA piece
30060183
EVA piece
2
paste amp panel
M3*2.5mm , black
Φ9*11*3mm
174*10*2mm adhensive at one side
218*10*2mm adhensive at one side
30060054
EVA piece
1
fix D5.6
1
fix D5.6
1
pad fuse holder
70090002
spring washer
70090012
flat washer
70070002
outer-hex nut 
1
fix D5.6
M3*18mm , black
M3*12mm , black
Φ3.2*6*0.7mm , black
Ф3.2*1*10mm , black
70010043
M.Screw with flat 
washer
8
fix amp panel to spacer on 
poweramp pcb, bracket on 
preamp pcb, amp panel to 
heatsink
1
fix D5.6
2
fix IC
70010031
M.Screw
70010051
M.Screw
M3*8mm , black
JBL
150P / 230V Service Manual
Page 16 of 50
UNISONIC TECHNOLOGIES CO., LTD 
2SA1015
                                                   
PNP SILICON TRANSISTOR
             
www.unisonic.com.tw                   
 
                             
 1of 4 
Copyright © 2009 Unisonic Technologies Co., LTD 
QW-R201-004.C
 
LOW FREQUENCY PNP 
AMPLIFIER TRANSISTOR 
„ 
 FEATURES 
* Collector-Emitter Voltage: BV
CEO
=-50V 
* Collector Current up to 150mA 
* High h
FE
 Linearity 
* Complement to UTC 2SC1815
 
Lead-free:    2SA1015L 
Halogen-free: 2SA1015G 
„ 
ORDERING INFORMATION 
Ordering Number 
Pin Assignment 
Normal 
Lead Free Plating 
Halogen Free 
Package 
1 2 3 
Packing 
2SA1015-x-T92-B 2SA1015L-x-T92-B 
2SA1015G-x-T92-B
TO-92  E  C  B  Tape 
Box 
2SA1015-x-T92-K 2SA1015L-x-T92-K 
2SA1015G-x-T92-K
TO-92  E  C  B 
Bulk 
JBL
150P / 230V Service Manual
Page 17 of 50
2SA1015
                                                   
PNP SILICON TRANSISTOR
                   
UNISONIC TECHNOLOGIES CO., LTD 
      
                   
2of 4 
                     
www.unisonic.com.tw
                                     
                                                                                                                    QW-R201-004.C 
„ 
ABSOLUTE MAXIMUM RATING 
(Ta=25°C, unless otherwise specified )
 
PARAMETER SYMBOL
RATINGS 
UNIT 
Collector-Base Voltage 
V
CBO
 -50  V 
Collector-Emitter Voltage 
V
CEO
 -50  V 
Emitter-Base Voltage 
V
EBO
 -5  V 
Collector Current 
I
C
 -150 
mA 
Base Current 
I
B
 -50 
mA 
Collector Dissipation 
P
C
 400 mW 
Junction Temperature   
T
J
 125 °C 
Storage Temperature 
T
STG
 
-55 ~ +125 
°C 
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. 
Absolute maximum ratings are stress ratings only and functional device operation is not implied. 
„ 
ELECTRICAL CHARACTERISTICS 
(Ta=25°C, unless otherwise specified)
 
PARAMETER SYMBOL
TEST 
CONDITIONS 
MIN 
TYP 
MAX UNIT
Collector-Base Breakdown Voltage 
BV
CBO
I
C
=-100
μA, I
E
=0 -50 
 
 
Collector-Emitter Breakdown Voltage 
BV
CEO
I
C
=-10mA, I
B
=0 -50 
 
 
Emitter-Base Breakdown Voltage 
BV
EBO
I
E
=-10
μA, I
C
=0 -5 
 
 
Collector Cut-off Current 
I
CBO
 
V
CB
=-50V, I
E
=0  
 
-100
nA
Emitter Cut-off Current   
I
EBO
 
V
EB
=-5V, I
C
=0  
 
-100
nA
h
FE1
 
V
CE
=-6V, I
C
=-2mA 120 
 
700
 
DC Current Gain 
h
FE2
 
V
CE
=-6V, I
C
=-150mA 25 
 
 
 
Collector-Emitter Saturation Voltage 
V
CE(SAT)
I
C
=-100mA, I
B
=-10mA  
-0.1 
-0.3
Base-Emitter Saturation Voltage 
V
BE(SAT)
I
C
=-100mA, I
B
=-10mA  
 
-1.1
Output Capacitance 
C
OB
 
V
CB
=-10V, I
E
=0, f=1MHz 
 
4.0 
7.0
pF
Current Gain Bandwidth Product 
f
T
 
V
CE
=-10V, Ic=-1mA 
80 
 
 
MHz
Noise Figure 
NF 
V
CE
=-6V , I
C
=-0.1mA,  
R
G
=1k
Ω, f=100Hz   
 0.5 6 dB
„ 
CLASSIFICATION OF h
FE1
 
RANK Y  GR  BL 
RANGE 120-240 200-400 350-700 
 
JBL
150P / 230V Service Manual
Page 18 of 50
2SJ108 
2003-03-25 
1
 
TOSHIBA Field Effect Transistor    Silicon P Channel Junction Type 
2SJ108
 
 
Low Noise Audio Amplifier Applications 
 
 
·  Recommended for first stages of EQ amplifiers and MC head 
amplifiers. 
·  High |Y
fs
|: |Y
fs
| = 22 mS (typ.) 
  
(V
DS
 = −10 V, V
GS
 = 0, I
DSS
 = −3 mA) 
·  Low noise: En = 0.95 nV/Hz
1/2
 (typ.) 
  
(V
DS
 = −10 V, I
D
 = −1 mA, f = 1 kHz) 
·  High input impedance: I
GSS
 = 1.0 nA (max) (V
GS
 = 25 V) 
·  Complementary to 2SK370 
·  Small package 
 
Maximum Ratings 
(Ta 
==== 25°C)
 
Characteristics Symbol 
Rating 
Unit 
Gate-drain voltage 
V
GDS
 
25 V 
Gate current 
I
G
 
-10 mA 
Drain power dissipation 
P
D
 200 
mW 
Junction temperature 
T
j
 
125 °C 
Storage temperature range 
T
stg
 
-55~125 °C 
 
Electrical Characteristics 
(Ta 
==== 25°C)
 
Characteristics Symbol  Test 
Condition Min 
Typ. 
Max
Unit
Gate cut-off current 
I
GSS
 
V
GS
 
= 25 V, V
DS
 
= 0 
¾ 
¾ 1.0 nA 
Gate-drain breakdown voltage 
V
 (BR) GDS
V
DS
 
= 0, I
G
 
= 100 mA 25 
¾ 
¾ V 
Drain current 
I
DSS
 
(Note)
V
DS
 
= -10 V, V
GS
 
= 0 
-2.6 
¾ 
-20
mA 
Gate-source cut-off voltage 
V
GS (OFF)
 
V
DS
 
= -10 V, I
D
 
= -0.1 mA 0.15 
¾ 2.0  V 
Forward transfer admittance 
ïY
fs
ï 
V
DS
 
= -10 V, V
GS
 
= 0, f = 1 kHz 
22 
¾ mS 
Input capacitance 
C
iss
 
V
DS
 
= -10 V, V
GS
 
= 0, f = 1 MHz 
¾ 
105 
¾ pF 
Reverse transfer capacitance 
C
rss
 
V
GD
 
= 10 V, I
D
 
= 0, f = 1 MHz 
¾ 
32 
¾ pF 
NF (1) 
V
DS
 
= -10 V, I
D
 
= -1 mA, R
G
 
= 1 kW, 
= 10 Hz 
¾ 1.0 10 
Noise figure 
NF (2) 
V
DS
 
= -10 V, I
D
 
= -1 mA, R
G
 
= 1 kW, 
= 1 kHz 
¾ 
0.5 2 
dB 
Note: I
DSS
 classification  GR: 
-2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA 
 
 
Unit: mm
 
 
JEDEC 
― 
JEITA 
― 
TOSHIBA 2-4E1C 
Weight: 0.13 g (typ.) 
JBL
150P / 230V Service Manual
Page 19 of 50
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