Harman Kardon AVR 350 (serv.man5) Service Manual ▷ View online
harman/kardon
Service Manual
AVR 347/230
AVR 350/230
7 x 55W 7.1 CHANNEL A/V RECEIVERS
CONTENTS
THIS MANUAL CONTAINS SEMICONDUCTOR PINOUTS ONLY.
Main Service Manual in separate file
Main Service Manual in separate file
Released
EU2008
harman/kardon,
Inc.
Rev
0,
07/2008
250 Crossways Park Dr.
Woodbury,
New
York,
11797
harman/kardon
AVR 347/230, AVR 350/230 Semiconductor Pinouts
Page 1 of 51
54
∗
h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
Darlington
2SB1647
I
C
– V
C E
Characteristics (Typical)
h
F E
– I
C
Characteristics (Typical)
h
F E
– I
C
Temperature
Characteristics (Typical)
I
C
– V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) – I
B
Characteristics (Typical)
P c – T a Derating
– 1 0 m A
– 5 0 m A
– 3 m A
0
– 3
– 2
– 1
– 0 . 2
–1
–0.5
–10
–5
–200
–100
–50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= – 1 0A
I
C
= – 1 5 A
I
C
= – 5 A
0
– 1 5
– 1 0
– 5
0
– 3
– 2
– 1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= – 4 V )
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
– 0 . 2
– 0 . 5
– 1
– 5
– 1 0 – 1 5
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= – 4 V )
1,000
10,000
50,000
5,000
T y p
( V
C E
= – 4 V )
– 0 . 2
– 1
– 0 . 5
– 5
– 1 0 – 1 5
1000
5000
10000
50000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
2 5 ˚ C
– 3 0 ˚ C
1 2 5 ˚ C
T i m e t ( m s )
0 . 1
1
3
0 . 5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
Transient Thermal Resistance
θ
j-a
(˚C/W)
0 . 0 2
0 . 1
0 . 0 5
0 . 5
1
5
1 0
0
4 0
2 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= – 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
Safe Operating Area (Single Pulse)
θ
j - a
– t
Characteristics
f
T
– I
E
Characteristics (Typical)
0
0
– 5
– 1 0
– 1 5
– 2
– 6
– 4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
– 1 . 5 m A
– 1 . 0 m A
– 0 . 8 m A
I
B
= – 0 . 3 m A
– 0 . 5 m A
–2mA
1 3 0
1 0 0
5 0
3 . 5
0
A m b i e n t T e m p e r a t u r e T a ( ˚ C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2560)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1647
–150
–150
–5
–15
–1
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1647
–100
max
–100
max
–150
min
5000
min
∗
–2.5
max
–3.0
max
45
typ
320
typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
■
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(
Ω
)
4
I
C
(A)
10
V
BB2
(V)
5
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
I
B1
(mA)
–10
V
BB1
(V)
–10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
a. Type No.
b. Lot No.
B
E
C
( 7 0
Ω
)
Equivalent circuit
harman/kardon
AVR 347/230, AVR 350/230 Semiconductor Pinouts
Page 2 of 51
158
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1647)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2560
150
150
5
15
1
130(Tc=25°C)
150
–55to+150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2560
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
70
typ
120
typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Darlington
2SD2560
(Ta=25°C)
(Ta=25°C)
I
C
– V
C E
Characteristics (Typical)
Safe Operating Area (Single Pulse)
0
0
1 0
5
1 5
2
4
6
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
50mA
I
B
= 0 . 3 m A
0 . 5 m A
0 . 8 m A
2mA
1 . 0 m A
3 m A
1 0 m A
1.5mA
V
C E
( s a t ) – I
B
Characteristics (Typical)
0
3
2
1
0 . 2
1
0.5
10
5
200
100
50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= . 1 5 A
I
C
= . 1 0 A
I
C
= . 5 A
I
C
– V
B E
Temperature
Characteristics (Typical)
0
1 5
5
1 0
0
2
2 . 2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
h
F E
– I
C
Characteristics (Typical)
C o l l e c t o r C u r r e n t I
C
( A )
0 2
0 . 5
1
1 0
1 5
5
50000
1000
5000
10000
500
DC Current Gain h
FE
( V
C E
= 4 V )
T y p
0 2
0 . 5
1
1 0
1 5
5
50000
1000
5000
10000
500
DC Current Gain h
FE
( V
C E
= 4 V )
h
F E
– I
C
Temperature
Characteristics (Typical)
C o l l e c t o r C u r r e n t I
C
( A )
125˚C
– 3
0 ˚ C
25˚C
θ
j - a
– t
Characteristics
0 . 1
1 . 0
3 . 0
0 . 5
1
1 0
1 0 0
1 0 0 0 2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
θ
j-a
(˚C/W)
f
T
– I
E
Characteristics (Typical)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
– 0 . 0 5
– 0 . 0 2
– 0 1
– 0 . 5
– 1
– 5
– 1 0
0
4 0
2 0
6 0
8 0
Cut-off Frequency f
T
(MH
Z
)
P c – T a Derating
1 3 0
1 0 0
5 0
3 . 5
0
A m b i e n t T e m p e r a t u r e T a ( ˚ C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
a. Type No.
b. Lot No.
■
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
Ω
)
4
I
C
(A)
10
V
BB2
(V)
–5
I
B2
(mA)
–10
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.2typ
I
B1
(mA)
10
V
BB1
(V)
10
B
C
E
( 7 0
Ω
)
Equivalent circuit
∗
h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
harman/kardon
AVR 347/230, AVR 350/230 Semiconductor Pinouts
Page 3 of 51
1/8
July 2001
■
HIGH SPEED: t
PD
= 5.0ns (TYP.) at V
CC
= 5V
■
LOW POWER DISSIPATION:
I
I
CC
= 2
µ
A(MAX.) at T
A
=25°C
■
COMPATIBLE WITH TTL OUTPUTS
V
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX.)
■
50
Ω
TRANSMISSION LINE DRIVING
CAPABILITY
■
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|I
OH
| = I
OL
= 24mA (MIN)
■
BALANCED PROPAGATION DELAYS:
t
t
PLH
≅
t
PHL
■
OPERATING VOLTAGE RANGE:
V
V
CC
(OPR) = 4.5V to 5.5V
■
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
74 SERIES 04
■
IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74ACT04 is an advanced high-speed CMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layer metal wiring C
The 74ACT04 is an advanced high-speed CMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
74ACT04
HEX INVERTER
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE
TUBE
T & R
DIP
74ACT04B
SOP
74ACT04M
74ACT04MTR
TSSOP
74ACT04TTR
TSSOP
DIP
SOP
harman/kardon
AVR 347/230, AVR 350/230 Semiconductor Pinouts
Page 4 of 51
